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 JMnic
Product Specification
Silicon PNP Power Transistors
2SA839
DESCRIPTION With TO-220 package Complement to type 2SC1669 High breakdown voltage APPLICATIONS Audio power amplifier applications Driver stage amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25ae Open emitter Open base Open collector CONDITIONS VALUE -150 -150 -5 -1.5 1.5 25 150 -55~150 ae ae UNIT V V V A A W
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-10mA ,IB=0 IE=-1mA ,IC=0 IC=-0.5A; IB=-50mA IC=-0.5A ; VCE=-10V VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-10V IC=-1A ; VCE=-10V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-10V 40 20 100 6 MIN -150 -5 TYP.
2SA839
SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT
MAX
UNIT V V
-1.5 -1.0 -20 -10 240 |I |I
V V A A
pF MHz
hFE-1 Classifications R 40-80 O 70-140 Y 120-240
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA839
Fig.2 Outline dimensions(unindicated tolerance:A
0.10 mm)
3


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